MS scientists have developed a new fast flash memory that is rewritable virtually forever(over 10 million cycles). Could be a breakthrough for cellphones and laptops.
http://www.theverge.com/2016/5/17/11693054/ibm-phase-change-memory-breakthrough-ram-flash-storage
http://www.prnewswire.com/news-releases/ibm-scientists-achieve-storage-memory-breakthrough-300269117.html
Wish the article had given a timeline when this might see production.
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